IGBT Chips

Description

IGBT chips

IGBT (Insulated Gate Bipolar Transistor) chips are a type of power electronic device used in high-power applications such as motor drives, power supplies, and renewable energy systems. IGBT chips are essentially a combination of a MOSFET (Metal Oxide Semiconductor Field-Effect Transistor) and a bipolar transistor.

The IGBT chip has three regions: the emitter, collector, and gate. The emitter and collector regions are doped with opposite polarity to create a p-n junction. The gate region is separated from the emitter and collector regions by an insulating layer. The gate of the IGBT chip is connected to a control circuit that switches the device on and off.

When a positive voltage is applied to the gate of the IGBT chip, it turns on and allows current to flow between the emitter and collector regions. When the gate voltage is removed, the IGBT chip turns off and interrupts the current flow. IGBT chips are capable of handling high current and high voltage levels, making them suitable for high-power applications.

IGBT chips are available in various configurations and packages to suit different application requirements. They can be designed to operate at different voltage and current levels, and they can be used in various topologies such as half-bridge, full-bridge, and three-phase inverters.

Insulated Gate Bipolar Transistor or IGBT chips are used for modules for switching in high power circuits. They are commonly packaged in single module with FRD diode chips which prevent inductive damage. The main application for IGBT chips is switching power supplies, amplifiers, motor drivers and other power control applications. Most common voltages of IGBT chips are 650V, 1200V and 1700V with a wide range of currents from 1A to 200A or even higher.

Item VCES IC (A) Vcesat (V) Thickness(um) Die-Size (mm×mm) Wafer Size (mm)
LSGC150TE120L02 1200V 150 1.85 120 12.58 x 11.70 200
LSGC100TE120L02 1200V 100 1.85 120 9.44x10.39 200
LSGC25TE120L02 1200V 25 1.85 120 5.71x4.98 200
LSGC10TE120L02 1200V 10 1.85 120 3.82x3.54 200
LSGC75TB120L02 1200V 75 1.85 120 9.12x8.10 200
LSGC50TB120L02 1200V 50 1.85 120 7.49x7.03 200
LSGC35TB120L02 1200V 35 1.85 120 6.45x6.30 200
LSGC15TB120L02 1200V 15 1.85 120 4.63x4.44 200
LSGC75TC120L02 1200V 75 1.85 120 9.12x8.10 200
LSGC50TC120L02 1200V 50 1.85 120 7.49x7.03 200
LSGC35TC120L02 1200V 35 1.85 120 6.45x6.30 200
LSGC15TC120L02 1200V 15 1.85 120 4.63x4.44 200
LSGC75TA120L02 1200V 75 1.85 120 9.12x8.10 200
LSGC50TA120L02 1200V 50 1.85 120 7.49x7.03 200
LSGC35TA120L02 1200V 35 1.85 120 6.45x6.30 200
LSGC15TA120L02 1200V 15 1.85 120 4.63x4.44 200
LSGC200TE065L02 650V 200 1.6 70 9.73x10.21 200
LSGC150TE065L02 650V 150 1.6 70 7.87x9.69 200
LSGC100TE065L02 650V 100 1.6 70 5.98x8.95 200
LSGC50TE065L02 650V 50 1.6 70 5.18x5.2 200
Item Process VCES IC (A) Vcesat (V) Thickness
(um)
Die-Size (mm×mm) Wafer Size(mm)
LSGC200PB120L10 FS 1200V 200 1.85 140 12.46x14.66 150
LSGC150PB120L10 FS 1200V 150 1.85 140 12.46x12.98 150
LSGC125PA120L10 FS 1200V 125 1.95 140 12.46x12.98 150
LSGC75PA120L10 FS 1200V 75 1.95 140 9.98 x 9.96 150
LSGC40PA120L10 FS 1200V 40 1.95 140 7.46x7.07 150
LSGC25PA120L10 FS 1200V 25 1.95 140 6.35x5.65 150
LSGC15PA120L10 FS 1200V 15 1.95 140 4.70x4.53 150
LSGC100N120L10 NPT 1200V 100 2 180 12.86x12.68 150
LSGC75N120L10 NPT 1200V 75 2 180 11.16 x 11.18 150
LSGC50N120L10 NPT 1200V 50 2 180 9.245x9.022 150
LSGC100N120F10 NPT 1200V 100 2.8 180 12.86x12.68 150
LSGC75N120F10 NPT 1200V 75 2.8 180 11.16 x 11.18 150
LSGC50N120F10 NPT 1200V 50 2.8 180 9.24x9.02 150
LSGC160PB170L10 FS 1700V 160 2.2 190 13.07x 15.24 150

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